AUIRLR120N Todos los transistores

 

AUIRLR120N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRLR120N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 20(max) nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: DPAK
 

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AUIRLR120N Datasheet (PDF)

 ..1. Size:444K  infineon
auirlr120n.pdf pdf_icon

AUIRLR120N

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

 8.1. Size:246K  international rectifier
auirlr3410trl.pdf pdf_icon

AUIRLR120N

PD - 97491AUTOMOTIVE GRADEAUIRLR3410Features Advanced Planar TechnologyHEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating DV(BR)DSS100V 175C Operating Temperature Fast SwitchingRDS(on) max.105mG Fully Avalanche Rated Repetitive Avalanche Allowed up toID17ASTjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifica

 8.2. Size:228K  international rectifier
auirlr3915.pdf pdf_icon

AUIRLR120N

PD - 97743AUTOMOTIVE GRADEAUIRLR3915FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Logic-Level Gate DriveDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.12ml 175C Operating Temperaturel Fast Switchingmax 14mGl Fully Avalanche RatedID (Silicon Limited)61Al Repetitive Avalanche AllowedSup to Tjmax ID (Package Limited)30Al Lead-Free, R

 8.3. Size:490K  international rectifier
auirlr024n auirlu024n.pdf pdf_icon

AUIRLR120N

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

Otros transistores... AUIRLB4030 , AUIRLI2505 , AUIRLL014N , AUIRLL024N , AUIRLL2705 , AUIRLR014N , AUIRLR024N , AUIRLR024Z , 7N65 , AUIRLR2703 , AUIRLR2905 , AUIRLR2905Z , AUIRLR2908 , AUIRLR3105 , AUIRLR3110Z , AUIRLR3114Z , AUIRLR3410 .

History: IRHM7230 | IPS60R1K0CE | FTK4822

 

 
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