AUIRLR120N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AUIRLR120N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 35 nS
Cossⓘ - Capacitancia de salida: 97 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de AUIRLR120N MOSFET
- Selecciónⓘ de transistores por parámetros
AUIRLR120N datasheet
..1. Size:444K infineon
auirlr120n.pdf 
AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D
8.1. Size:246K international rectifier
auirlr3410trl.pdf
PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica
8.2. Size:228K international rectifier
auirlr3915.pdf
PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R
8.3. Size:490K international rectifier
auirlr024n auirlu024n.pdf
AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com
8.4. Size:276K international rectifier
auirlr2703tr.pdf
PD - 97620 AUTOMOTIVE GRADE AUIRLR2703 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 30V 175 C Operating Temperature RDS(on) max. 45m Fast Switching G ID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 20
8.5. Size:238K international rectifier
auirlr2905tr.pdf
AUIRLR2905 AUTOMOTIVE GRADE AUIRLU2905 Advanced Planar Technology HEXFET Power MOSFET Logic-Level Gate Drive D V(BR)DSS Low On-Resistance 55V Dynamic dV/dT Rating RDS(on) max. 27m 175 C Operating Temperature G Fast Switching ID 42A S Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Compliant Autom
8.6. Size:230K international rectifier
auirlr2908.pdf
PD - 97734 AUTOMOTIVE GRADE AUIRLR2908 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS l Logic-Level Gate Drive 80V l Low On-Resistance RDS(on) typ. 22.5m l 175 C Operating Temperature max 28m l Fast Switching G l Fully Avalanche Rated ID (Silicon Limited) 39A l Repetitive Avalanche Allowed S ID (Package Limited) 30A up to Tjmax l Lead-Free,
8.7. Size:273K international rectifier
auirlr2905ztr.pdf
PD - 97583 AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.5m Fast Switching G ID (Silicon Limited) 60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automot
8.8. Size:203K international rectifier
auirlr014n.pdf
AUTOMOTIVE GRADE PD - 97740 AUIRLR014N Advanced Planar Technology Logic-Level Gate Drive HEXFET Power MOSFET Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 0.14 G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 10A S Lead-Free, RoHS Compliant Auto
8.9. Size:287K international rectifier
auirlr3705ztr.pdf
PD - 97611 AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 8.0m Fast Switching G ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotiv
8.10. Size:619K international rectifier
auirlr3105.pdf
PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A
8.11. Size:312K international rectifier
auirlr024ntr.pdf
PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual
8.12. Size:636K infineon
auirlr3636.pdf
AUTOMOTIVE GRADE AUIRLR3636 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 5.4m Logic Level Gate Drive max. 6.8m 175 C Operating Temperature ID (Silicon Limited) 99A Fast Switching ID (Package Limited) 50A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS C
8.13. Size:717K infineon
auirlr024z auirlu024z.pdf
AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De
8.14. Size:448K infineon
auirlr2703.pdf
AUTOMOTIVE GRADE AUIRLR2703 Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 30V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 45m 175 C Operating Temperature ID (Silicon Limited) 23A Fast Switching Fully Avalanche Rated ID (Package Limited) 20A Repetitive Avalanche Allowed up to Tjm
8.15. Size:555K infineon
auirlr3410.pdf
AUTOMOTIVE GRADE AUIRLR3410 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 100V Logic Level Gate Drive Dynamic dV/dT Rating RDS(on) max. 105m 175 C Operating Temperature Fast Switching ID 17A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D
8.16. Size:714K infineon
auirlr3110z auirlu3110z.pdf
AUIRLR3110Z AUTOMOTIVE GRADE AUIRLU3110Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Logic Level Gate Drive max. 14m 175 C Operating Temperature ID (Silicon Limited) 63A Fast Switching ID (Package Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lea
8.17. Size:706K infineon
auirlr3114z auirlu3114z.pdf
AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175 C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L
8.18. Size:670K infineon
auirlr3705z.pdf
AUTOMOTIVE GRADE AUIRLR3705Z Features HEXFET Power MOSFET Advanced Process Technology Logic-Level VDSS 55V Ultra Low On-Resistance RDS(on) max. 8.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 89A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A Automotive Quali
8.19. Size:660K infineon
auirlr2905z.pdf
AUTOMOTIVE GRADE AUIRLR2905Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 13.5m Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 60A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Desc
Otros transistores... AUIRLB4030, AUIRLI2505, AUIRLL014N, AUIRLL024N, AUIRLL2705, AUIRLR014N, AUIRLR024N, AUIRLR024Z, IRF630, AUIRLR2703, AUIRLR2905, AUIRLR2905Z, AUIRLR2908, AUIRLR3105, AUIRLR3110Z, AUIRLR3114Z, AUIRLR3410
