AUIRLR120N Specs and Replacement

Type Designator: AUIRLR120N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: DPAK

AUIRLR120N substitution

- MOSFET ⓘ Cross-Reference Search

 

AUIRLR120N datasheet

 ..1. Size:444K  infineon
auirlr120n.pdf pdf_icon

AUIRLR120N

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175 C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D ... See More ⇒

 8.1. Size:246K  international rectifier
auirlr3410trl.pdf pdf_icon

AUIRLR120N

PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS 100V 175 C Operating Temperature Fast Switching RDS(on) max. 105m G Fully Avalanche Rated Repetitive Avalanche Allowed up to ID 17A S Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifica... See More ⇒

 8.2. Size:228K  international rectifier
auirlr3915.pdf pdf_icon

AUIRLR120N

PD - 97743 AUTOMOTIVE GRADE AUIRLR3915 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V l Low On-Resistance RDS(on) typ. 12m l 175 C Operating Temperature l Fast Switching max 14m G l Fully Avalanche Rated ID (Silicon Limited) 61A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 30A l Lead-Free, R... See More ⇒

 8.3. Size:490K  international rectifier
auirlr024n auirlu024n.pdf pdf_icon

AUIRLR120N

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com... See More ⇒

Detailed specifications: AUIRLB4030, AUIRLI2505, AUIRLL014N, AUIRLL024N, AUIRLL2705, AUIRLR014N, AUIRLR024N, AUIRLR024Z, IRF630, AUIRLR2703, AUIRLR2905, AUIRLR2905Z, AUIRLR2908, AUIRLR3105, AUIRLR3110Z, AUIRLR3114Z, AUIRLR3410

Keywords - AUIRLR120N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.