BS270 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BS270
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: TO92
Búsqueda de reemplazo de BS270 MOSFET
BS270 Datasheet (PDF)
bs270.pdf
April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect transistors 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.are produced using Fairchild's proprietary, high cell density,High density cell design for low RDS(ON).DMOS technology. These products have been designed tominimize on-state resistance wh
bs270.pdf
BS270N-Channel Enhancement Mode Field Effect Transistor General DescriptionFeaturesThese N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.cell density, DMOS technology. These products have been High density cell design for low RDS(ON).designed to minimize on-state resistance while p
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