BS270 Datasheet and Replacement
Type Designator: BS270
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO92
BS270 substitution
BS270 Datasheet (PDF)
bs270.pdf
April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect transistors 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.are produced using Fairchild's proprietary, high cell density,High density cell design for low RDS(ON).DMOS technology. These products have been designed tominimize on-state resistance wh
bs270.pdf
BS270N-Channel Enhancement Mode Field Effect Transistor General DescriptionFeaturesThese N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.cell density, DMOS technology. These products have been High density cell design for low RDS(ON).designed to minimize on-state resistance while p
Datasheet: BS107P , BS107PT , BS108 , BS170 , BS170F , BS170P , BS250F , BS250P , IRF1010E , BSN254 , BSN254A , BSP92 , BSR56 , BSR57 , BSR58 , BSS100 , BSS110 .
History: 2SJ455
Keywords - BS270 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SJ455
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