All MOSFET. BS270 Datasheet

 

BS270 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BS270
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.625 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 0.4 A
   Maximum Junction Temperature (Tj): 150 °C
   Maximum Drain-Source On-State Resistance (Rds): 2 Ohm
   Package: TO92

 BS270 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BS270 Datasheet (PDF)

 ..1. Size:339K  fairchild semi
 bs270.pdf

BS270 BS270

April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect transistors 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.are produced using Fairchild's proprietary, high cell density,High density cell design for low RDS(ON).DMOS technology. These products have been designed tominimize on-state resistance wh

 ..2. Size:464K  onsemi
 bs270.pdf

BS270 BS270

BS270N-Channel Enhancement Mode Field Effect Transistor General DescriptionFeaturesThese N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.cell density, DMOS technology. These products have been High density cell design for low RDS(ON).designed to minimize on-state resistance while p

Datasheet: BS107P , BS107PT , BS108 , BS170 , BS170F , BS170P , BS250F , BS250P , AO3407 , BSN254 , BSN254A , BSP92 , BSR56 , BSR57 , BSR58 , BSS100 , BSS110 .

 

 
Back to Top