BS270 Datasheet. Specs and Replacement

Type Designator: BS270

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO92

BS270 substitution

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BS270 datasheet

 ..1. Size:339K  fairchild semi
 bs270.pdf pdf_icon

BS270

April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors 400mA, 60V. RDS(ON) = 2 @ VGS = 10V. are produced using Fairchild's proprietary, high cell density, High density cell design for low RDS(ON). DMOS technology. These products have been designed to minimize on-state resistance wh... See More ⇒

 ..2. Size:464K  onsemi
 bs270.pdf pdf_icon

BS270

BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high 400mA, 60V. RDS(ON) = 2 @ VGS = 10V. cell density, DMOS technology. These products have been High density cell design for low RDS(ON). designed to minimize on-state resistance while p... See More ⇒

Detailed specifications: BS107P, BS107PT, BS108, BS170, BS170F, BS170P, BS250F, BS250P, IRF1010E, BSN254, BSN254A, BSP92, BSR56, BSR57, BSR58, BSS100, BSS110

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