All MOSFET. BS270 Datasheet

 

BS270 Datasheet and Replacement


   Type Designator: BS270
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO92
 

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BS270 Datasheet (PDF)

 ..1. Size:339K  fairchild semi
 bs270.pdf pdf_icon

BS270

April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect transistors 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.are produced using Fairchild's proprietary, high cell density,High density cell design for low RDS(ON).DMOS technology. These products have been designed tominimize on-state resistance wh

 ..2. Size:464K  onsemi
 bs270.pdf pdf_icon

BS270

BS270N-Channel Enhancement Mode Field Effect Transistor General DescriptionFeaturesThese N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high 400mA, 60V. RDS(ON) = 2 @ VGS = 10V.cell density, DMOS technology. These products have been High density cell design for low RDS(ON).designed to minimize on-state resistance while p

Datasheet: BS107P , BS107PT , BS108 , BS170 , BS170F , BS170P , BS250F , BS250P , IRFP250 , BSN254 , BSN254A , BSP92 , BSR56 , BSR57 , BSR58 , BSS100 , BSS110 .

Keywords - BS270 MOSFET datasheet

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