IRF7313 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7313
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.9 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de IRF7313 MOSFET
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IRF7313 datasheet
irf7313.pdf
PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l
irf7313pbf.pdf
PD - 95039 IRF7313PbF HEXFET Power MOSFET l Generation V Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N-Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.029 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme
irf7313q.pdf
PD - 96125 IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.029 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appl
irf7313qpbf.pdf
PD - 96125A IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029 Description Top View These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastes
Otros transistores... IRF6702M2D , IRF7341I , IRF7301 , IRFI4020H-117P , IRFHM8363 , IRL6372 , IRF9910 , IRF7311 , AON6414A , IRF7752G , IRF7904 , IRF7303Q , IRFH7911 , IRFI4024H-117P , IRF6723M2D , IRFI4019H-117P , IRF8513 .
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