All MOSFET. IRF7313 Datasheet

 

IRF7313 Datasheet and Replacement


   Type Designator: IRF7313
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO8
 

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IRF7313 Datasheet (PDF)

 ..1. Size:105K  international rectifier
irf7313.pdf pdf_icon

IRF7313

PD - 9.1480AIRF7313PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 ..2. Size:205K  international rectifier
irf7313pbf.pdf pdf_icon

IRF7313

PD - 95039IRF7313PbFHEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N-Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-FreeRDS(on) = 0.029Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 0.1. Size:298K  1
irf7313q.pdf pdf_icon

IRF7313

PD - 96125IRF7313QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2RDS(on) = 0.029l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

 0.2. Size:218K  international rectifier
irf7313qpbf.pdf pdf_icon

IRF7313

PD - 96125AIRF7313QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8l Dual N- Channel MOSFETS1 D1VDSS = 30Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperaturel Lead-Free 4 5G2 D2RDS(on) = 0.029DescriptionTop ViewThese HEXFET Power MOSFET's in a DualSO-8 package utilize the lastes

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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