IRF7313 PDF and Equivalents Search

 

IRF7313 Specs and Replacement

Type Designator: IRF7313

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.9 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: SO8

IRF7313 substitution

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IRF7313 datasheet

 ..1. Size:105K  international rectifier
irf7313.pdf pdf_icon

IRF7313

PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029 T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l... See More ⇒

 ..2. Size:205K  international rectifier
irf7313pbf.pdf pdf_icon

IRF7313

PD - 95039 IRF7313PbF HEXFET Power MOSFET l Generation V Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N-Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free RDS(on) = 0.029 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

 0.1. Size:298K  1
irf7313q.pdf pdf_icon

IRF7313

PD - 96125 IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.029 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appl... See More ⇒

 0.2. Size:218K  international rectifier
irf7313qpbf.pdf pdf_icon

IRF7313

PD - 96125A IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029 Description Top View These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastes... See More ⇒

Detailed specifications: IRF6702M2D, IRF7341I, IRF7301, IRFI4020H-117P, IRFHM8363, IRL6372, IRF9910, IRF7311, AON6414A, IRF7752G, IRF7904, IRF7303Q, IRFH7911, IRFI4024H-117P, IRF6723M2D, IRFI4019H-117P, IRF8513

Keywords - IRF7313 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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