IRF7313
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7313
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 6.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 8.9
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029
Ohm
Package:
SO8
IRF7313
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7313
Datasheet (PDF)
..1. Size:105K international rectifier
irf7313.pdf 
PD - 9.1480AIRF7313PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l
..2. Size:205K infineon
irf7313pbf.pdf
PD - 95039IRF7313PbFHEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N-Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-FreeRDS(on) = 0.029Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme
0.1. Size:298K 1
irf7313q.pdf
PD - 96125IRF7313QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2RDS(on) = 0.029l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl
0.2. Size:218K international rectifier
irf7313qpbf.pdf
PD - 96125AIRF7313QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8l Dual N- Channel MOSFETS1 D1VDSS = 30Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2l 150C Operating Temperaturel Lead-Free 4 5G2 D2RDS(on) = 0.029DescriptionTop ViewThese HEXFET Power MOSFET's in a DualSO-8 package utilize the lastes
0.3. Size:204K international rectifier
irf7313pbf-1.pdf
IRF7313PbF-1HEXFET Power MOSFETVDS 30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 (@V = 10V)GS3 6S2 D2Qg (typical) 22 nC45G2 D2ID 6.5 ASO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Enviro
0.4. Size:239K international rectifier
auirf7313q.pdf
PD - 97751AUTOMOTIVE GRADEAUIRF7313QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFETV(BR)DSS30V1 8S1 D1l Low On-Resistance2 7G1 D1l Dynamic dV/dT Rating RDS(on) typ.23m3 6S2 D2l 175C Operating Temperature max. 29m4 5l Fast Switching G2 D2l Lead-Free, RoHS CompliantID6.9ATop Viewl Automotive Qualified*Des
0.5. Size:578K infineon
auirf7313q.pdf
AUTOMOTIVE GRADE AUIRF7313Q VDSS Features 30V 1 8S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 23m Dual N Channel MOSFET 3 6S2 D2 max. 4 Low On-Resistance 5 29mG2 D2 Logic Level Gate Drive ID 6.9A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Lead-Free, RoHS Compliant
0.6. Size:1355K cn vbsemi
irf7313qtr.pdf
IRF7313QTRwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
0.7. Size:834K cn vbsemi
irf7313tr.pdf
IRF7313TRwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
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