BSR58 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSR58
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Id|ⓘ - Corriente continua de drenaje: 0.08 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 60 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de BSR58 MOSFET
BSR58 Datasheet (PDF)
bsr56 bsr57 bsr58.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSR56; BSR57; BSR58N-channel FETsApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel FETs BSR56; BSR57; BSR58DESCRIPTIONSymmetrical silicon n-channeldepletion type junction field-effecttransistors in a plastic microminiatureenvelope intended for application inth
bsr58.pdf

BSR58N-Channel Low-Frequency Low-Noise 3Amplifier This device is designed for low-power chopper or switching application sourced from process 512SOT-231Mark: M61. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVDGO Drain-Gate Voltage 40 VVGSO Gate-Source Voltage - 40 VIGF Forward Gate Current 50 mAPt
bsr58lt1.pdf

BSR58LT1JFET Chopper TransistorN-Channel - DepletionFeatures Pb-Free Package is Available http://onsemi.comMAXIMUM RATINGS2 SOURCERating Symbol Value UnitDrain -Gate Voltage VDG -40 VdcGate-Source Voltage VGS -35 Vdc 3GATEGate Current IG 50 mAdcTotal Device Dissipation PD1 DRAIN@ TA = 25C 350 mWDerate above 25C 2.8 mW/CLead Temperature TL 300 COper
Otros transistores... BS250F , BS250P , BS270 , BSN254 , BSN254A , BSP92 , BSR56 , BSR57 , 2N7002 , BSS100 , BSS110 , BSS123 , BSS123A , BSS138 , BSS84 , BUK100-50DL , BUK100-50GS .
History: NDF04N62Z
History: NDF04N62Z



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