BSR58 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in th

BSR58 N-Channel Low-Frequency Low-Noise 3 Amplifier This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 1 Mark M6 1. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VDGO Drain-Gate Voltage 40 V VGSO Gate-Source Voltage - 40 V IGF Forward Gate Current 50 mA Pt

BSR58LT1 JFET Chopper Transistor N-Channel - Depletion Features Pb-Free Package is Available http //onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain -Gate Voltage VDG -40 Vdc Gate-Source Voltage VGS -35 Vdc 3 GATE Gate Current IG 50 mAdc Total Device Dissipation PD 1 DRAIN @ TA = 25 C 350 mW Derate above 25 C 2.8 mW/ C Lead Temperature TL 300 C Oper