BSR58 Datasheet. Specs and Replacement

Type Designator: BSR58  📄📄 

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.08 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm

Package: SOT23

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BSR58 datasheet

 ..1. Size:33K  philips
 bsr56 bsr57 bsr58.pdf pdf_icon

BSR58

DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in th... See More ⇒

 ..2. Size:43K  fairchild semi
 bsr58.pdf pdf_icon

BSR58

BSR58 N-Channel Low-Frequency Low-Noise 3 Amplifier This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 1 Mark M6 1. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VDGO Drain-Gate Voltage 40 V VGSO Gate-Source Voltage - 40 V IGF Forward Gate Current 50 mA Pt... See More ⇒

 0.1. Size:91K  onsemi
 bsr58lt1.pdf pdf_icon

BSR58

BSR58LT1 JFET Chopper Transistor N-Channel - Depletion Features Pb-Free Package is Available http //onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain -Gate Voltage VDG -40 Vdc Gate-Source Voltage VGS -35 Vdc 3 GATE Gate Current IG 50 mAdc Total Device Dissipation PD 1 DRAIN @ TA = 25 C 350 mW Derate above 25 C 2.8 mW/ C Lead Temperature TL 300 C Oper... See More ⇒

Detailed specifications: BS250F, BS250P, BS270, BSN254, BSN254A, BSP92, BSR56, BSR57, AON7506, BSS100, BSS110, BSS123, BSS123A, BSS138, BSS84, BUK100-50DL, BUK100-50GS

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