All MOSFET. BSR58 Datasheet


BSR58 MOSFET. Datasheet pdf. Equivalent

   Type Designator: BSR58
   Marking Code: M6_M6p_M6P
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.25 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Drain Current |Id|: 0.08 A
   Maximum Junction Temperature (Tj): 150 °C
   Drain-Source Capacitance (Cd): 5 pF
   Maximum Drain-Source On-State Resistance (Rds): 60 Ohm
   Package: SOT23

 BSR58 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


BSR58 Datasheet (PDF)

 ..1. Size:33K  philips
bsr56 bsr57 bsr58.pdf


DISCRETE SEMICONDUCTORSDATA SHEETBSR56; BSR57; BSR58N-channel FETsApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel FETs BSR56; BSR57; BSR58DESCRIPTIONSymmetrical silicon n-channeldepletion type junction field-effecttransistors in a plastic microminiatureenvelope intended for application inth

 ..2. Size:43K  fairchild semi


BSR58N-Channel Low-Frequency Low-Noise 3Amplifier This device is designed for low-power chopper or switching application sourced from process 512SOT-231Mark: M61. Drain 2. Source 3. Gate Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVDGO Drain-Gate Voltage 40 VVGSO Gate-Source Voltage - 40 VIGF Forward Gate Current 50 mAPt

 0.1. Size:91K  onsemi


BSR58LT1JFET Chopper TransistorN-Channel - DepletionFeatures Pb-Free Package is Available http://onsemi.comMAXIMUM RATINGS2 SOURCERating Symbol Value UnitDrain -Gate Voltage VDG -40 VdcGate-Source Voltage VGS -35 Vdc 3GATEGate Current IG 50 mAdcTotal Device Dissipation PD1 DRAIN@ TA = 25C 350 mWDerate above 25C 2.8 mW/CLead Temperature TL 300 COper

Datasheet: BS250F , BS250P , BS270 , BSN254 , BSN254A , BSP92 , BSR56 , BSR57 , 18N50 , BSS100 , BSS110 , BSS123 , BSS123A , BSS138 , BSS84 , BUK100-50DL , BUK100-50GS .


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