SSM3J15CT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM3J15CT

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 8.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm

Encapsulados: SOT883 CST3

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SSM3J15CT datasheet

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ssm3j15ct.pdf pdf_icon

SSM3J15CT

SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Unit mm Optimum for high-density mounting in small packages Low ON-resistance Ron = 12 (max) (@VGS = -4 V) 0.6 0.05 Ron = 32 (max) (@VGS = -2.5 V) 0.5 0.03 Absolute Maximum Ratings (Ta = 25 C) Characteristics Sy

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ssm3j15fs.pdf pdf_icon

SSM3J15CT

SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v

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ssm3j15fu.pdf pdf_icon

SSM3J15CT

SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v

 7.3. Size:184K  toshiba
ssm3j15te.pdf pdf_icon

SSM3J15CT

SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low ON resistance Ron = 12 (max) (@VGS = -4 V) Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -30 V Gate-Source v

Otros transistores... SSM3J129TU, SSM3J130TU, SSM3J132TU, SSM3J133TU, SSM3J134TU, SSM3J135TU, SSM3J13T, SSM3J14T, K4145, SSM3J15FS, SSM3J15FU, SSM3J15FV, SSM3J15F, SSM3J16CT, SSM3J16FS, SSM3J16FU, SSM3J16FV