Справочник MOSFET. SSM3J15CT

 

SSM3J15CT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3J15CT
   Маркировка: S1
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 8.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm
   Тип корпуса: SOT883 CST3

 Аналог (замена) для SSM3J15CT

 

 

SSM3J15CT Datasheet (PDF)

 ..1. Size:159K  toshiba
 ssm3j15ct.pdf

SSM3J15CT SSM3J15CT

SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Unit: mm Optimum for high-density mounting in small packages Low ON-resistance : Ron = 12 (max) (@VGS = -4 V) 0.60.05: Ron = 32 (max) (@VGS = -2.5 V) 0.50.03Absolute Maximum Ratings (Ta = 25C) Characteristics Sy

 7.1. Size:186K  toshiba
 ssm3j15fs.pdf

SSM3J15CT SSM3J15CT

SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v

 7.2. Size:226K  toshiba
 ssm3j15fu.pdf

SSM3J15CT SSM3J15CT

SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v

 7.3. Size:184K  toshiba
 ssm3j15te.pdf

SSM3J15CT SSM3J15CT

SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v

 7.4. Size:175K  toshiba
 ssm3j15f.pdf

SSM3J15CT SSM3J15CT

SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm Small package+0.5 Low ON resistance : Ron = 12 (max) (@VGS = -4 V) 2.5-0.3+0.25 : Ron = 32 (max) (@VGS = -2.5 V) 1.5-0.15Absolute Maximum Ratings (Ta = 25C) 12 3Characteristics Symbol Rating UnitDrain-Sou

 7.5. Size:144K  toshiba
 ssm3j15fv.pdf

SSM3J15CT SSM3J15CT

SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance : RDS(ON) = 12 (max) (@VGS = -4 V) : RDS(ON) = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1.20.050.80.05Characterist

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