SSM3J15CT
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3J15CT
Marking Code: S1
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.7
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 8.6
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12
Ohm
Package:
SOT883
CST3
SSM3J15CT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3J15CT
Datasheet (PDF)
..1. Size:159K toshiba
ssm3j15ct.pdf 
SSM3J15CT TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J15CT High-Speed Switching Applications Analog Switch Applications Unit: mm Optimum for high-density mounting in small packages Low ON-resistance : Ron = 12 (max) (@VGS = -4 V) 0.60.05: Ron = 32 (max) (@VGS = -2.5 V) 0.50.03Absolute Maximum Ratings (Ta = 25C) Characteristics Sy
7.1. Size:186K toshiba
ssm3j15fs.pdf
SSM3J15FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
7.2. Size:226K toshiba
ssm3j15fu.pdf
SSM3J15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
7.3. Size:184K toshiba
ssm3j15te.pdf
SSM3J15TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : Ron = 12 (max) (@VGS = -4 V) : Ron = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -30 VGate-Source v
7.4. Size:175K toshiba
ssm3j15f.pdf
SSM3J15F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15F High Speed Switching Applications Analog Switch Applications Unit: mm Small package+0.5 Low ON resistance : Ron = 12 (max) (@VGS = -4 V) 2.5-0.3+0.25 : Ron = 32 (max) (@VGS = -2.5 V) 1.5-0.15Absolute Maximum Ratings (Ta = 25C) 12 3Characteristics Symbol Rating UnitDrain-Sou
7.5. Size:144K toshiba
ssm3j15fv.pdf
SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High-Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages Unit: mm Low on-resistance : RDS(ON) = 12 (max) (@VGS = -4 V) : RDS(ON) = 32 (max) (@VGS = -2.5 V) Absolute Maximum Ratings (Ta = 25C) 1.20.050.80.05Characterist
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