SSM3J326T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM3J326T
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 96 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0393 Ohm
Paquete / Cubierta: TSM
Búsqueda de reemplazo de MOSFET SSM3J326T
SSM3J326T Datasheet (PDF)
ssm3j325f.pdf
SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J325F Power Management Switch Applications Unit: mm +0.5 1.5-V drive 2.5-0.3+0.25 Low ON-resistance: R = 311 m (max) (@V = -1.5 V) DS(ON) GS1.5-0.15 R = 231 m (max) (@V = -1.8 V) DS(ON) GS R = 179 m (max) (@V = -2.5 V) DS(ON) GS1 R = 150 m (max) (@V = -4.5 V)
ssm3j328r.pdf
SSM3J328R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J328R Power Management Switch Applications Unit: mm+0.08 1.5-V drive0.42+0.08-0.050.170.05M A -0.07 Low ON-resistance: RDS(ON) = 88.4m (max) (@VGS = -1.5 V) 3RDS(ON) = 56.0m (max) (@VGS = -1.8 V) RDS(ON) = 39.7m (max) (@VGS = -2.5 V) RDS(ON) = 29.8m (max) (@V
ssm3j321t.pdf
SSM3J321T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM3J321T Power Management Switch Applications High-Speed Switching Applications 1.5V drive Unit: mm Low ON-resistance: Ron = 137m (max) (@VGS = -1.5 V) +0.2Ron = 88m (max) (@VGS = -1.8 V) 2.8-0.3Ron = 62m (max) (@VGS = -2.5 V) +0.21.6-0.1Ron = 46m (max) (@VGS = -4.5
ssm3j327r.pdf
SSM3J327Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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