SSM3J326T Specs and Replacement
Type Designator: SSM3J326T
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0393 Ohm
Package: TSM
SSM3J326T substitution
- MOSFET ⓘ Cross-Reference Search
SSM3J326T datasheet
ssm3j325f.pdf
SSM3J325F TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM3J325F Power Management Switch Applications Unit mm +0.5 1.5-V drive 2.5-0.3 +0.25 Low ON-resistance R = 311 m (max) (@V = -1.5 V) DS(ON) GS 1.5-0.15 R = 231 m (max) (@V = -1.8 V) DS(ON) GS R = 179 m (max) (@V = -2.5 V) DS(ON) GS 1 R = 150 m (max) (@V = -4.5 V) ... See More ⇒
Detailed specifications: SSM3J306T, SSM3J307T, SSM3J312T, SSM3J313T, SSM3J314T, SSM3J317T, SSM3J321T, SSM3J325F, IRF1407, SSM3J327F, SSM3J327R, SSM3J328R, SSM3J332R, SSM3J334R, SSM3J35CT, SSM3J35FS, SSM3J35MFV
Keywords - SSM3J326T MOSFET specs
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