SSM6J501NU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6J501NU

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0153 Ohm

Encapsulados: UDFN6B

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SSM6J501NU datasheet

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SSM6J501NU

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS ) SSM6J501NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

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SSM6J501NU

SSM6J507NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J507NU SSM6J507NU SSM6J507NU SSM6J507NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

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SSM6J501NU

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J503NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

 7.3. Size:236K  toshiba
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SSM6J501NU

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS ) SSM6J502NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

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