SSM6J501NU
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6J501NU
Маркировка: SP1
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 10
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 29.9
nC
Cossⓘ - Выходная емкость: 290
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0153
Ohm
Тип корпуса: UDFN6B
Аналог (замена) для SSM6J501NU
SSM6J501NU
Datasheet (PDF)
..1. Size:205K toshiba
ssm6j501nu.pdf 
SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J501NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
7.1. Size:240K toshiba
ssm6j507nu.pdf 
SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5
7.2. Size:237K toshiba
ssm6j503nu.pdf 
SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
7.3. Size:236K toshiba
ssm6j502nu.pdf 
SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C
7.4. Size:241K toshiba
ssm6j50tu.pdf 
SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J50TU High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Ra
7.5. Size:235K toshiba
ssm6j505nu.pdf 
SSM6J505NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J505NUSSM6J505NUSSM6J505NUSSM6J505NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.2 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -
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