All MOSFET. SSM6J501NU Datasheet

 

SSM6J501NU Datasheet and Replacement


   Type Designator: SSM6J501NU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0153 Ohm
   Package: UDFN6B
 

 SSM6J501NU substitution

   - MOSFET ⓘ Cross-Reference Search

 

SSM6J501NU Datasheet (PDF)

 ..1. Size:205K  toshiba
 ssm6j501nu.pdf pdf_icon

SSM6J501NU

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J501NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

 7.1. Size:240K  toshiba
 ssm6j507nu.pdf pdf_icon

SSM6J501NU

SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

 7.2. Size:237K  toshiba
 ssm6j503nu.pdf pdf_icon

SSM6J501NU

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

 7.3. Size:236K  toshiba
 ssm6j502nu.pdf pdf_icon

SSM6J501NU

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

SHOW MORE

Datasheet: SSM6J23FE , SSM6J25FE , SSM6J26FE , SSM6J401TU , SSM6J402TU , SSM6J409TU , SSM6J410TU , SSM6J412TU , IRFB31N20D , SSM6J502NU , SSM6J503NU , SSM6J50TU , SSM6J51TU , SSM6J53FE , SSM6K06FU , SSM6K07FU , SSM6K08FU .

History: AP4543GEH-HF | NCE60N1K0I

Keywords - SSM6J501NU MOSFET datasheet

 SSM6J501NU cross reference
 SSM6J501NU equivalent finder
 SSM6J501NU lookup
 SSM6J501NU substitution
 SSM6J501NU replacement

 

 
Back to Top

 


 
.