SSM6K406TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM6K406TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.6 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: UF6

Búsqueda de reemplazo de MOSFET SSM6K406TU

SSM6K406TU Datasheet (PDF)

1.1. ssm6k406tu 080703.pdf Size:212K _toshiba

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU 0 High-Speed Switching Applications � 4.5-V drive Unit: mm � Low ON-resistance: Ron = 38.5 m? (max) (@VGS = 4.5 V) 2.1�0.1 Ron = 25.0 m? (max) (@VGS = 10 V) 1.7�0.1 Absolute Maximum Ratings (Ta = 25?C) 1 6 Characteristics Symbol Rating Unit 2 5 Drain�source voltage VDSS 30 V 3 4 Gate�source vo

3.1. ssm6k403tu 071101.pdf Size:214K _toshiba

SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU 0 Power Management Switch Applications UNIT: mm 0 High-Speed Switching Applications 2.1�0.1 1.7�0.1 1 6 � 1.5V drive � Low ON-resistance:Ron = 66m? (max) (@VGS = 1.5V) 2 5 Ron = 43m? (max) (@VGS = 1.8V) 3 4 Ron = 32m? (max) (@VGS = 2.5V) Ron = 28m? (max) (@VGS = 4.0V) Absolute Maximum Ratings

3.2. ssm6k404tu 100126.pdf Size:193K _toshiba

SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU 0 High-Speed Switching Applications 0 Power Management Switch Applications Unit: mm � 1.5-V drive � Low ON-resistance: RDS(ON) = 147 m? (max) (@VGS = 1.5 V) 2.1�0.1 RDS(ON) = 100 m? (max) (@VGS = 1.8 V) 1.7�0.1 RDS(ON) = 70 m? (max) (@VGS = 2.5 V) RDS(ON) = 55 m? (max) (@VGS = 4.0 V) 1 6 Absolu

3.3. ssm6k405tu 071101.pdf Size:193K _toshiba

SSM6K405TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K405TU 0 High-Speed Switching Applications 0 Power Management Switch Applications Unit: mm � 1.5V drive � Low ON-resistance: Ron = 307 m? (max) (@VGS = 1.5V) 2.1�0.1 Ron = 214 m? (max) (@VGS = 1.8V) 1.7�0.1 Ron = 164 m? (max) (@VGS = 2.5V) Ron = 126 m? (max) (@VGS = 4.0V) 1 6 Absolute Maximum Ratings

3.4. ssm6k407tu 071101.pdf Size:321K _toshiba

SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU Unit: mm 0 DC-DC Converter, Relay Drive and Motor Drive Applications 2.1�0.1 1.7�0.1 1 6 4V drive Low ON-resistance :Ron = 440m? (max) (@VGS = 4 V) 2 5 :Ron = 300m? (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25?) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating Unit 3 : Gate

Otros transistores... SSM6K25FE , SSM6K30FE , SSM6K31FE , SSM6K32TU , SSM6K34TU , SSM6K403TU , SSM6K404TU , SSM6K405TU , 2SK1058 , SSM6K407TU , SSM6K411TU , SSM6L05FU , SSM6L09FU , SSM6L10TU , SSM6L11TU , SSM6L12TU , SSM6L13TU .

Liste

Recientemente añadidas las descripciónes de los transistores: