SSM6K406TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM6K406TU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 0.5 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 4.6 A
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.023 Ohm
Empaquetado / Estuche: UF6
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SSM6K406TU Datasheet (PDF)
1.1. ssm6k406tu 080703.pdf 
Size:212K _toshiba
SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU 0 High-Speed Switching Applications • 4.5-V drive Unit: mm • Low ON-resistance: Ron = 38.5 m? (max) (@VGS = 4.5 V) 2.1±0.1 Ron = 25.0 m? (max) (@VGS = 10 V) 1.7±0.1 Absolute Maximum Ratings (Ta = 25?C) 1 6 Characteristics Symbol Rating Unit 2 5 Drain–source voltage VDSS 30 V 3 4 Gat
3.1. ssm6k403tu 071101.pdf Size:214K _toshiba
SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU 0 Power Management Switch Applications UNIT: mm 0 High-Speed Switching Applications 2.1±0.1 1.7±0.1 1 6 • 1.5V drive • Low ON-resistance:Ron = 66m? (max) (@VGS = 1.5V) 2 5 Ron = 43m? (max) (@VGS = 1.8V) 3 4 Ron = 32m? (max) (@VGS = 2.5V) Ron = 28m? (max) (@VGS = 4.0V) Absolute Maximum
3.2. ssm6k404tu 100126.pdf Size:193K _toshiba
SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU 0 High-Speed Switching Applications 0 Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 147 m? (max) (@VGS = 1.5 V) 2.1±0.1 RDS(ON) = 100 m? (max) (@VGS = 1.8 V) 1.7±0.1 RDS(ON) = 70 m? (max) (@VGS = 2.5 V) RDS(ON) = 55 m? (max) (@VGS = 4.0 V) 1
3.3. ssm6k405tu 071101.pdf Size:193K _toshiba
SSM6K405TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K405TU 0 High-Speed Switching Applications 0 Power Management Switch Applications Unit: mm • 1.5V drive • Low ON-resistance: Ron = 307 m? (max) (@VGS = 1.5V) 2.1±0.1 Ron = 214 m? (max) (@VGS = 1.8V) 1.7±0.1 Ron = 164 m? (max) (@VGS = 2.5V) Ron = 126 m? (max) (@VGS = 4.0V) 1 6 Absolute Maximum
3.4. ssm6k407tu 071101.pdf Size:321K _toshiba
SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU Unit: mm 0 DC-DC Converter, Relay Drive and Motor Drive Applications 2.1±0.1 1.7±0.1 1 6 4V drive Low ON-resistance :Ron = 440m? (max) (@VGS = 4 V) 2 5 :Ron = 300m? (max) (@VGS = 10 V) 3 4 Absolute Maximum Ratings (Ta = 25?) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating Unit 3 :
Otros transistores... SSM6K25FE , SSM6K30FE , SSM6K31FE , SSM6K32TU , SSM6K34TU , SSM6K403TU , SSM6K404TU , SSM6K405TU , 2SK1058 , SSM6K407TU , SSM6K411TU , SSM6L05FU , SSM6L09FU , SSM6L10TU , SSM6L11TU , SSM6L12TU , SSM6L13TU .
