All MOSFET. SSM6K406TU Datasheet

 

SSM6K406TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM6K406TU
   Marking Code: KNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.4 nC
   Cossⓘ - Output Capacitance: 143 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: UF6

 SSM6K406TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM6K406TU Datasheet (PDF)

 ..1. Size:212K  toshiba
 ssm6k406tu.pdf

SSM6K406TU SSM6K406TU

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU High-Speed Switching Applications 4.5-V drive Unit: mm Low ON-resistance: Ron = 38.5 m (max) (@VGS = 4.5 V) 2.10.1 Ron = 25.0 m (max) (@VGS = 10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1 6Characteristics Symbol Rating Unit2 5Drainsource voltage VDSS 30 V3 4

 7.1. Size:214K  toshiba
 ssm6k403tu.pdf

SSM6K406TU SSM6K406TU

SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications UNIT: mm High-Speed Switching Applications 2.10.11.70.11 6 1.5V drive Low ON-resistance:Ron = 66m (max) (@VGS = 1.5V) 2 5Ron = 43m (max) (@VGS = 1.8V) 3 4Ron = 32m (max) (@VGS = 2.5V) Ron = 28m (max) (@VGS = 4.0V) Absolute

 7.2. Size:193K  toshiba
 ssm6k404tu.pdf

SSM6K406TU SSM6K406TU

SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 147 m (max) (@VGS = 1.5 V) 2.10.1RDS(ON) = 100 m (max) (@VGS = 1.8 V) 1.70.1RDS(ON) = 70 m (max) (@VGS = 2.5 V) RDS(ON) = 55 m (max) (@VGS =

 7.3. Size:193K  toshiba
 ssm6k405tu.pdf

SSM6K406TU SSM6K406TU

SSM6K405TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K405TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) 2.10.1Ron = 214 m (max) (@VGS = 1.8V) 1.70.1Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) 1 6Abso

 7.4. Size:321K  toshiba
 ssm6k407tu.pdf

SSM6K406TU SSM6K406TU

SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU Unit: mm DC-DC Converter, Relay Drive and Motor Drive Applications 2.10.11.70.11 6 4V drive Low ON-resistance :Ron = 440m (max) (@VGS = 4 V) 2 5:Ron = 300m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating U

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