BUK436W-1000B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK436W-1000B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: SOT429

Búsqueda de reemplazo de MOSFET BUK436W-1000B

BUK436W-1000B Datasheet (PDF)

..1. Size:53K philips
buk436w-1000b 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 1000 VThe device is intended for use in ID Drain current (DC) 3.1 ASwitched Mode Power Supplies Ptot Total power dissipation 125 W(S

6.1. Size:54K philips
buk436w-200a-b 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 19 17 A(SMPS),

6.2. Size:54K philips
buk436w-800a-b 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 4 3.5 A(SMPS),

8.1. Size:236K inchange semiconductor
buk436-800ab.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

8.2. Size:235K inchange semiconductor
buk436-100ab.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

8.3. Size:235K inchange semiconductor
buk436-60ab.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applic

8.4. Size:235K inchange semiconductor
buk436-200ab.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

Otros transistores... BUK200-50X , BUK203-50X , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A , BUK426-1000B , 5N50 , BUK436W-200A , BUK436W-200B , BUK436W-800A , BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B .

Liste

Recientemente añadidas las descripciónes de los transistores: