All MOSFET. BUK436W-1000B Datasheet

 

BUK436W-1000B Datasheet and Replacement


   Type Designator: BUK436W-1000B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT429
 

 BUK436W-1000B substitution

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BUK436W-1000B Datasheet (PDF)

 ..1. Size:53K  philips
buk436w-1000b 1.pdf pdf_icon

BUK436W-1000B

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 1000 VThe device is intended for use in ID Drain current (DC) 3.1 ASwitched Mode Power Supplies Ptot Total power dissipation 125 W(S

 6.1. Size:54K  philips
buk436w-200a-b 1.pdf pdf_icon

BUK436W-1000B

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -200A -200BThe device is intended for use in VDS Drain-source voltage 200 200 VSwitched Mode Power Supplies ID Drain current (DC) 19 17 A(SMPS),

 6.2. Size:54K  philips
buk436w-800a-b 1.pdf pdf_icon

BUK436W-1000B

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK436 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 4 3.5 A(SMPS),

 8.1. Size:236K  inchange semiconductor
buk436-800ab.pdf pdf_icon

BUK436W-1000B

INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK436-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance appl

Datasheet: BUK200-50X , BUK203-50X , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A , BUK426-1000B , AO4468 , BUK436W-200A , BUK436W-200B , BUK436W-800A , BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B .

History: FDMA1027PT | STP36N05LFI | VN0106N9

Keywords - BUK436W-1000B MOSFET datasheet

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