BUK436W-1000B PDF and Equivalents Search

 

BUK436W-1000B Specs and Replacement

Type Designator: BUK436W-1000B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: SOT429

BUK436W-1000B substitution

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BUK436W-1000B datasheet

 ..1. Size:53K  philips
buk436w-1000b 1.pdf pdf_icon

BUK436W-1000B

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 3.1 A Switched Mode Power Supplies Ptot Total power dissipation 125 W (S... See More ⇒

 6.1. Size:54K  philips
buk436w-200a-b 1.pdf pdf_icon

BUK436W-1000B

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A (SMPS),... See More ⇒

 6.2. Size:54K  philips
buk436w-800a-b 1.pdf pdf_icon

BUK436W-1000B

Philips Semiconductors Product specification PowerMOS transistor BUK436W-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK436 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 4 3.5 A (SMPS),... See More ⇒

 8.1. Size:236K  inchange semiconductor
buk436-800ab.pdf pdf_icon

BUK436W-1000B

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK436-800A/B DESCRIPTION Drain Source Voltage- V =800V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance appl... See More ⇒

Detailed specifications: BUK200-50X , BUK203-50X , BUK203-50Y , BUK204-50Y , BUK207-50X , BUK207-50Y , BUK426-1000A , BUK426-1000B , 60N06 , BUK436W-200A , BUK436W-200B , BUK436W-800A , BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B .

History: BUK109-50GS

Keywords - BUK436W-1000B MOSFET specs

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 BUK436W-1000B replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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