TK10A50D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK10A50D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.72 Ohm

Encapsulados: TO220SIS

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TK10A50D datasheet

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TK10A50D

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK10A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.62 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 ..2. Size:252K  inchange semiconductor
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TK10A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A50D ITK10A50D FEATURES Low drain-source on-resistance RDS(ON) = 0.62 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS

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 tk10a50w.pdf pdf_icon

TK10A50D

TK10A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A50W TK10A50W TK10A50W TK10A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 7.2. Size:253K  inchange semiconductor
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TK10A50D

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A50W ITK10A50W FEATURES Low drain-source on-resistance RDS(ON) = 0.38 Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

MOSTRAR MÁS

Otros transistores... TJ50S06M3L, TJ60S04M3L, TJ60S06M3L, TJ70A06J3, TJ80S04M3L, TJ8S06M3L, TK100F04K3, TK100F06K3, STP65NF06, TK10A55D, TK10A60D, TK10S04K3L, TK10X40D, TK11A45D, TK11A50D, TK11A55D, TK11A60D