TK10A50D - параметры транзистора MOSFET, его аналоги, datasheet

TK10A50D Datasheet (PDF)

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TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A50DITK10A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.62 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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TK10A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A50WTK10A50WTK10A50WTK10A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

7.2. Size:253K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A50WITK10A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators