All MOSFET. TK10A50D Datasheet

 

TK10A50D Datasheet and Replacement


   Type Designator: TK10A50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO220SIS
 

 TK10A50D substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK10A50D Datasheet (PDF)

 ..1. Size:197K  toshiba
 tk10a50d.pdf pdf_icon

TK10A50D

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 ..2. Size:252K  inchange semiconductor
 tk10a50d.pdf pdf_icon

TK10A50D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A50DITK10A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.62 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

 7.1. Size:251K  toshiba
 tk10a50w.pdf pdf_icon

TK10A50D

TK10A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A50WTK10A50WTK10A50WTK10A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:253K  inchange semiconductor
 tk10a50w.pdf pdf_icon

TK10A50D

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A50WITK10A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

SHOW MORE

Datasheet: TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L , TJ8S06M3L , TK100F04K3 , TK100F06K3 , IRFZ48N , TK10A55D , TK10A60D , TK10S04K3L , TK10X40D , TK11A45D , TK11A50D , TK11A55D , TK11A60D .

Keywords - TK10A50D MOSFET datasheet

 TK10A50D cross reference
 TK10A50D equivalent finder
 TK10A50D lookup
 TK10A50D substitution
 TK10A50D replacement

 

 
Back to Top

 


 
.