All MOSFET. TK10A50D Datasheet

 

TK10A50D MOSFET. Datasheet pdf. Equivalent

Type Designator: TK10A50D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 10 A

Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm

Package: TO220SIS

TK10A50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TK10A50D PDF doc:

1.1. tk10a50d_en_datasheet_100603.pdf Size:197K _toshiba2

TK10A50D
TK10A50D

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 ? (typ.) High forward transfer admittance: ?Yfs? = 5.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rat

4.1. tk10a55d_en_datasheet_100827.pdf Size:189K _toshiba2

TK10A50D
TK10A50D

TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK10A55D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.56 ?(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS =

5.1. tk10a60d.pdf Size:186K _toshiba2

TK10A50D
TK10A50D

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS VII) TK10A60D Unit: mm Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 ? (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

Datasheet: TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L , TJ8S06M3L , TK100F04K3 , TK100F06K3 , IRF9Z34 , TK10A55D , TK10A60D , TK10S04K3L , TK10X40D , TK11A45D , TK11A50D , TK11A55D , TK11A60D .

 


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