TK11A55D Todos los transistores

 ..1. Size:179K  toshiba
 tk11a55d.pdf

TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK11A55D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.52 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.1. Size:173K  toshiba
 tk11a50d.pdf

TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK11A50D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth

 8.2. Size:252K  inchange semiconductor
 tk11a50d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK11A50D ITK11A50D FEATURES Low drain-source on-resistance RDS(on) = 0.45 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS

 9.1. Size:195K  toshiba
 tk11a60d.pdf

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK11A60D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 9.2. Size:237K  toshiba
 tk11a65w.pdf

TK11A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK11A65W TK11A65W TK11A65W TK11A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.33 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 9.3. Size:192K  toshiba
 tk11a45d.pdf

TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK11A45D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 Low drain-source ON-resistance RDS (ON) = 0.5 (typ.) 3.2 0.2 A High forward transfer admittance Yfs = 3.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 450 V) Enhancement mode Vt

 9.4. Size:328K  toshiba
 tk11a65d.pdf

TK11A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK11A65D TK11A65D TK11A65D TK11A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.54 (typ.) (2) High forward transfer admittance Yfs = 7.5 S (typ.) (3) Low leakage current ID

 9.5. Size:253K  inchange semiconductor
 tk11a60d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK11A60D ITK11A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.54 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS

 9.6. Size:253K  inchange semiconductor
 tk11a65w.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK11A65W ITK11A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.39 Easy to control Gate switching Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

 9.7. Size:252K  inchange semiconductor
 tk11a45d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK11A45D ITK11A45D FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(