TK11A55D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK11A55D
Маркировка: K11A55D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 550 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 25 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 135 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.63 Ohm
Тип корпуса: TO220SIS
TK11A55D Datasheet (PDF)
tk11a55d.pdf
TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk11a50d.pdf
TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A50D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth
tk11a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A50DITK11A50DFEATURESLow drain-source on-resistance:RDS(on) = 0.45 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk11a60d.pdf
TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK11A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk11a65w.pdf
TK11A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11A65WTK11A65WTK11A65WTK11A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.33 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk11a45d.pdf
TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) 3.2 0.2 A High forward transfer admittance: Yfs = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement mode: Vt
tk11a65d.pdf
TK11A65DMOSFETs Silicon N-Channel MOS (-MOS)TK11A65DTK11A65DTK11A65DTK11A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: ID
tk11a60d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A60DITK11A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.54 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk11a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A65WITK11A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.39Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators
tk11a45d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A45DITK11A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
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