TK11A55D
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK11A55D
Marking Code: K11A55D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.63
Ohm
Package:
TO220SIS
TK11A55D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK11A55D
Datasheet (PDF)
..1. Size:179K toshiba
tk11a55d.pdf 
TK11A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.52 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
8.1. Size:173K toshiba
tk11a50d.pdf
TK11A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A50D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth
8.2. Size:252K inchange semiconductor
tk11a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A50DITK11A50DFEATURESLow drain-source on-resistance:RDS(on) = 0.45 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
9.1. Size:195K toshiba
tk11a60d.pdf
TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK11A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.2. Size:237K toshiba
tk11a65w.pdf
TK11A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11A65WTK11A65WTK11A65WTK11A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.33 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
9.3. Size:192K toshiba
tk11a45d.pdf
TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) 3.2 0.2 A High forward transfer admittance: Yfs = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement mode: Vt
9.4. Size:328K toshiba
tk11a65d.pdf
TK11A65DMOSFETs Silicon N-Channel MOS (-MOS)TK11A65DTK11A65DTK11A65DTK11A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.)(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)(3) Low leakage current: ID
9.5. Size:253K inchange semiconductor
tk11a60d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A60DITK11A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.54 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
9.6. Size:253K inchange semiconductor
tk11a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A65WITK11A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.39Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators
9.7. Size:252K inchange semiconductor
tk11a45d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A45DITK11A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
