TK11A65D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK11A65D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 157 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: TO220SIS

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TK11A65D datasheet

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TK11A65D

TK11A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK11A65D TK11A65D TK11A65D TK11A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.54 (typ.) (2) High forward transfer admittance Yfs = 7.5 S (typ.) (3) Low leakage current ID

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TK11A65D

TK11A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK11A65W TK11A65W TK11A65W TK11A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.33 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

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TK11A65D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK11A65W ITK11A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.39 Easy to control Gate switching Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

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 tk11a60d.pdf pdf_icon

TK11A65D

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK11A60D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

MOSTRAR MÁS

Otros transistores... TK10A55D, TK10A60D, TK10S04K3L, TK10X40D, TK11A45D, TK11A50D, TK11A55D, TK11A60D, AON7403, TK12A10K3, TK12A45D, TK12A50D, TK12A53D, TK12A55D, TK12A60D, TK12A60U, TK12A65D