TK11A65D Specs and Replacement

Type Designator: TK11A65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 157 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO220SIS

TK11A65D substitution

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TK11A65D datasheet

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TK11A65D

TK11A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK11A65D TK11A65D TK11A65D TK11A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.54 (typ.) (2) High forward transfer admittance Yfs = 7.5 S (typ.) (3) Low leakage current ID... See More ⇒

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TK11A65D

TK11A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK11A65W TK11A65W TK11A65W TK11A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.33 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

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TK11A65D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK11A65W ITK11A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.39 Easy to control Gate switching Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ... See More ⇒

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TK11A65D

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK11A60D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)... See More ⇒

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Detailed specifications: TK10A55D, TK10A60D, TK10S04K3L, TK10X40D, TK11A45D, TK11A50D, TK11A55D, TK11A60D, AON7403, TK12A10K3, TK12A45D, TK12A50D, TK12A53D, TK12A55D, TK12A60D, TK12A60U, TK12A65D

Keywords - TK11A65D MOSFET specs

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