2N6656 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6656
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Paquete / Cubierta: TO3
Búsqueda de reemplazo de MOSFET 2N6656
2N6656 Datasheet (PDF)
2n6659-2.pdf
2N6659, 2N6659-2www.vishay.comVishay SiliconixN-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 35 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 1.8 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205ADBENEFITS(TO-39) Guarant
2n6659x.pdf
N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X Switching Regulators Converters Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage 20V ID TC = 25C Drain Current 1.4A ID TC = 100C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25C Power Dissipation 6.25W
2n6653.pdf
2N6653Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6654.pdf
2N6654Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 350V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6659.pdf
2N6659MECHANICAL DATADimensions in mm (inches)NCHANNEL8.89 (0.35)ENHANCEMENT MODE9.40 (0.37)7.75 (0.305)8.51 (0.335)MOS TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.8.51 (0.335) Switching Regulatorsdia. Converters5.08 (0.200)typ. Motor Drivers2.542(0.100)1 30.66 (0.026)1.14 (0.045
2n6655.pdf
2N6655Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6653.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol
2n6654.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol
2n6653.pdf
isc Silicon NPN Power Transistor 2N6653DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta
2n6654.pdf
isc Silicon NPN Power Transistor 2N6654DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta
Otros transistores... 2N4392CSM , 2N4393 , 2N4393CSM , 2N4416 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , 10N60 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX .
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