All MOSFET. 2N6656 Datasheet

 

2N6656 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6656

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 35 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO3

2N6656 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6656 Datasheet (PDF)

0.1. 2n6656-59 2n6660-61.pdf Size:42K _no

2N6656



9.1. 2n6659-2.pdf Size:89K _vishay

2N6656
2N6656

2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Military Qualified VDS (V) 35 • Low On-Resistence: 1.3  RDS(on) () at VGS = 10 V 1.8 • Low Threshold: 1.7 V Configuration Single • Low Input Capacitance: 35 pF • Fast Switching Speed: 8 ns • Low Input and Output Leakage TO-205AD BENEFITS (TO-39) • Guarant

9.2. 2n6383-85 2n6648-49 2n6650.pdf Size:146K _mospec

2N6656
2N6656

A A A

 9.3. 2n6653.pdf Size:11K _semelab

2N6656

2N6653 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.4. 2n6654.pdf Size:12K _semelab

2N6656

2N6654 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.5. 2n6659x.pdf Size:71K _semelab

2N6656
2N6656

N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X • Switching Regulators • Converters • Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 35V VGS Gate – Source Voltage ±20V ID TC = 25°C Drain Current 1.4A ID TC = 100°C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25°C Power Dissipation 6.25W

9.6. 2n6655.pdf Size:11K _semelab

2N6656

2N6655 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

9.7. 2n6659.pdf Size:18K _semelab

2N6656
2N6656

2N6659 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL 8.89 (0.35) ENHANCEMENT MODE 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MOS TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) • Switching Regulators dia. • Converters 5.08 (0.200) typ. • Motor Drivers 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045

9.8. 2n6653.pdf Size:147K _jmnic

2N6656
2N6656

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol

9.9. 2n6654.pdf Size:147K _jmnic

2N6656
2N6656

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol

9.10. 2n6653.pdf Size:186K _inchange_semiconductor

2N6656
2N6656

isc Silicon NPN Power Transistor 2N6653 DESCRIPTION ·High Voltage Capability ·High Current Current Capability ·Low Collector Saturation Voltage- ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for use in switching and linear applications in military and power conversion. Absolute maximum ratings(Ta

9.11. 2n6654.pdf Size:186K _inchange_semiconductor

2N6656
2N6656

isc Silicon NPN Power Transistor 2N6654 DESCRIPTION ·High Voltage Capability ·High Current Current Capability ·Low Collector Saturation Voltage- ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for use in switching and linear applications in military and power conversion. Absolute maximum ratings(Ta

Datasheet: 2N4392CSM , 2N4393 , 2N4393CSM , 2N4416 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , IRF1404 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX .

 

 
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