Справочник MOSFET. 2N6656

 

2N6656 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N6656

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 25 W

Предельно допустимое напряжение сток-исток (Uds): 35 V

Предельно допустимое напряжение затвор-исток (Ugs): 15 V

Максимально допустимый постоянный ток стока (Id): 2 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 5 ns

Сопротивление сток-исток открытого транзистора (Rds): 1.8 Ohm

Тип корпуса: TO3

Аналог (замена) для 2N6656

 

 

2N6656 Datasheet (PDF)

1.1. 2n6656-59 2n6660-61.pdf Size:42K _no

2N6656



5.1. 2n6383-85 2n6648-49 2n6650.pdf Size:146K _mospec

2N6656
2N6656

A A A

5.2. 2n6653.pdf Size:11K _semelab

2N6656

2N6653 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

 5.3. 2n6655.pdf Size:11K _semelab

2N6656

2N6655 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.4. 2n6654.pdf Size:12K _semelab

2N6656

2N6654 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

 5.5. 2n6659.pdf Size:18K _semelab

2N6656
2N6656

2N6659 MECHANICAL DATA Dimensions in mm (inches) NCHANNEL 8.89 (0.35) ENHANCEMENT MODE 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MOS TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) Switching Regulators dia. Converters 5.08 (0.200) typ. Motor Drivers 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.

5.6. 2n6653.pdf Size:147K _jmnic

2N6656
2N6656

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

5.7. 2n6654.pdf Size:147K _jmnic

2N6656
2N6656

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

5.8. 2n6653.pdf Size:116K _inchange_semiconductor

2N6656
2N6656

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6653 MAXIMUN RA

5.9. 2n6654.pdf Size:116K _inchange_semiconductor

2N6656
2N6656

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6654 MAXIMUN RA

Другие MOSFET... 2N4392CSM , 2N4393 , 2N4393CSM , 2N4416 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , IRF1404 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX .

 

 
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Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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