TK15A60U MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK15A60U

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 2300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO220SIS

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TK15A60U datasheet

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 tk15a60u.pdf pdf_icon

TK15A60U

TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.24 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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TK15A60U

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK15A60U, ITK15A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.3 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID=1 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION

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 tk15a60d.pdf pdf_icon

TK15A60U

TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK15A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth

 9.1. Size:232K  toshiba
 tk15a20d.pdf pdf_icon

TK15A60U

TK15A20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK15A20D TK15A20D TK15A20D TK15A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth =

MOSTRAR MÁS

Otros transistores... TK13P25D, TK14A45DA, TK14A45D, TK14A55D, TK150F04K3, TK15A20D, TK15A50D, TK15A60D, 2N7000, TK15E60U, TK15J50D, TK15J60U, TK15X60U, TK16A45D, TK16A55D, TK16J55D, TK17A65U