All MOSFET. TK15A60U Datasheet

 

TK15A60U MOSFET. Datasheet pdf. Equivalent

Type Designator: TK15A60U

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO220SIS

TK15A60U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

TK15A60U Datasheet (PDF)

1.1. tk15a60u en datasheet 100820.pdf Size:183K _toshiba2

TK15A60U
TK15A60U

TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 ? (typ.) High forward transfer admittance: ?Yfs? = 8.5 S (typ.) Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum

3.1. tk15a60d en datasheet 100812.pdf Size:189K _toshiba2

TK15A60U
TK15A60U

TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK15A60D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.31 ? (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS

 5.1. tk15a20d en datasheet 111010.pdf Size:232K _toshiba2

TK15A60U
TK15A60U

TK15A20D MOSFETs Silicon N-Channel MOS (?-MOS?) TK15A20D TK15A20D TK15A20D TK15A20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 ? (typ.) (2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5

5.2. tk15a50d en datasheet 100812.pdf Size:188K _toshiba2

TK15A60U
TK15A60U

TK15A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOS?) TK15A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 ? (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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