TK15A60U - параметры транзистора MOSFET, его аналоги, datasheet

TK15A60U Datasheet (PDF)

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TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK15A60U, ITK15A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.3 (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID=1 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION

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TK15A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK15A60D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth

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tk15a20d.pdf pdf_icon

TK15A20DMOSFETs Silicon N-Channel MOS (-MOS)TK15A20DTK15A20DTK15A20DTK15A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =