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TK16J55D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK16J55D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm
   Paquete / Cubierta: SC65 TO3P

 Búsqueda de reemplazo de MOSFET TK16J55D

 

Principales características: TK16J55D

 ..1. Size:189K  toshiba
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TK16J55D

TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK16J55D Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source ON-resistance RDS (ON) = 0.31 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth = 2.0 to 4.0 V (VD

 9.1. Size:243K  toshiba
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TK16J55D

TK16J60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W5 TK16J60W5 TK16J60W5 TK16J60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 9.2. Size:245K  toshiba
tk16j60w.pdf pdf_icon

TK16J55D

TK16J60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16J60W TK16J60W TK16J60W TK16J60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 9.3. Size:210K  inchange semiconductor
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TK16J55D

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16J60W FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

Otros transistores... TK15A60D , TK15A60U , TK15E60U , TK15J50D , TK15J60U , TK15X60U , TK16A45D , TK16A55D , AON7408 , TK17A65U , TK17J65U , TK18A30D , TK18A50D , TK18A60V , TK19A45D , TK19J55D , TK1P90A .

History: AP4438CGM | TF2323 | INK0112AC1 | SSM3310GH | PTP04N04N | ZVN3306ASTOA

 

 
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