TK16J55D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK16J55D Datasheet (PDF)

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TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK16J55D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD

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TK16J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16J60W5TK16J60W5TK16J60W5TK16J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

9.2. Size:245K toshiba
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TK16J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16J60WTK16J60WTK16J60WTK16J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

9.3. Size:210K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16J60WFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Otros transistores... TK15A60D , TK15A60U , TK15E60U , TK15J50D , TK15J60U , TK15X60U , TK16A45D , TK16A55D , 2N7000 , TK17A65U , TK17J65U , TK18A30D , TK18A50D , TK18A60V , TK19A45D , TK19J55D , TK1P90A .