All MOSFET. TK16J55D Datasheet

 

TK16J55D MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK16J55D
   Marking Code: K16J55D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: SC65 TO3P

 TK16J55D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK16J55D Datasheet (PDF)

 ..1. Size:189K  toshiba
 tk16j55d.pdf

TK16J55D TK16J55D

TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK16J55D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD

 9.1. Size:243K  toshiba
 tk16j60w5.pdf

TK16J55D TK16J55D

TK16J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16J60W5TK16J60W5TK16J60W5TK16J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by used to Super Junction Str

 9.2. Size:245K  toshiba
 tk16j60w.pdf

TK16J55D TK16J55D

TK16J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16J60WTK16J60WTK16J60WTK16J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 9.3. Size:210K  inchange semiconductor
 tk16j60w.pdf

TK16J55D TK16J55D

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16J60WFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

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