TK18A30D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK18A30D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.139 Ohm

Encapsulados: TO220SIS

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TK18A30D datasheet

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 tk18a30d.pdf pdf_icon

TK18A30D

TK18A30D MOSFETs Silicon N-Channel MOS ( -MOS ) TK18A30D TK18A30D TK18A30D TK18A30D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.1 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 300 V) (3) Enhancement mode Vth =

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TK18A30D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK18A30D ITK18A30D FEATURES Low drain-source on-resistance RDS(ON) = 0.1 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(

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 tk18a60v.pdf pdf_icon

TK18A30D

TK18A60V MOSFETs Silicon N-Channel MOS (DTMOS ) TK18A60V TK18A60V TK18A60V TK18A60V 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.165 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 9.2. Size:198K  toshiba
 tk18a50d.pdf pdf_icon

TK18A30D

TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK18A50D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

MOSTRAR MÁS

Otros transistores... TK15J50D, TK15J60U, TK15X60U, TK16A45D, TK16A55D, TK16J55D, TK17A65U, TK17J65U, 2N7002, TK18A50D, TK18A60V, TK19A45D, TK19J55D, TK1P90A, TK1Q90A, TK20A25D, TK20A60U