Справочник MOSFET. TK18A30D

 

TK18A30D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK18A30D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.139 Ohm
   Тип корпуса: TO220SIS

 Аналог (замена) для TK18A30D

 

 

TK18A30D Datasheet (PDF)

 ..1. Size:223K  toshiba
 tk18a30d.pdf

TK18A30D TK18A30D

TK18A30DMOSFETs Silicon N-Channel MOS (-MOS)TK18A30DTK18A30DTK18A30DTK18A30D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.1 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 300 V)(3) Enhancement mode: Vth =

 ..2. Size:253K  inchange semiconductor
 tk18a30d.pdf

TK18A30D TK18A30D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK18A30DITK18A30DFEATURESLow drain-source on-resistance:RDS(ON) = 0.1 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

 9.1. Size:260K  toshiba
 tk18a60v.pdf

TK18A30D TK18A30D

TK18A60VMOSFETs Silicon N-Channel MOS (DTMOS)TK18A60VTK18A60VTK18A60VTK18A60V1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.165 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 9.2. Size:198K  toshiba
 tk18a50d.pdf

TK18A30D TK18A30D

TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK18A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 9.3. Size:253K  inchange semiconductor
 tk18a50d.pdf

TK18A30D TK18A30D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK18A50DITK18A50DFEATURESLow drain-source on-resistance:RDS(on) = 0.22 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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