TK18A30D MOSFET Datasheet: N-Ch, 300V, 18A. Full specification with pinout and replacement list

TK18A30D Specs and Replacement

   Type Designator: TK18A30D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.139 Ohm
   Package: TO220SIS

TK18A30D substitution

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TK18A30D datasheet

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TK18A30D MOSFETs Silicon N-Channel MOS ( -MOS ) TK18A30D TK18A30D TK18A30D TK18A30D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.1 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 300 V) (3) Enhancement mode Vth = ... See More ⇒

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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK18A30D ITK18A30D FEATURES Low drain-source on-resistance RDS(ON) = 0.1 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(... See More ⇒

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tk18a60v.pdf pdf_icon

TK18A60V MOSFETs Silicon N-Channel MOS (DTMOS ) TK18A60V TK18A60V TK18A60V TK18A60V 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.165 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

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TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK18A50D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒