TK18A30D Datasheet. Specs and Replacement
Type Designator: TK18A30D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.139 Ohm
Package: TO220SIS
📄📄 Copy
TK18A30D substitution
- MOSFET ⓘ Cross-Reference Search
TK18A30D datasheet
tk18a30d.pdf
TK18A30D MOSFETs Silicon N-Channel MOS ( -MOS ) TK18A30D TK18A30D TK18A30D TK18A30D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.1 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 300 V) (3) Enhancement mode Vth = ... See More ⇒
tk18a30d.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK18A30D ITK18A30D FEATURES Low drain-source on-resistance RDS(ON) = 0.1 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(... See More ⇒
tk18a60v.pdf
TK18A60V MOSFETs Silicon N-Channel MOS (DTMOS ) TK18A60V TK18A60V TK18A60V TK18A60V 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.165 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
tk18a50d.pdf
TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK18A50D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒
Detailed specifications: TK15J50D, TK15J60U, TK15X60U, TK16A45D, TK16A55D, TK16J55D, TK17A65U, TK17J65U, IRF9540N, TK18A50D, TK18A60V, TK19A45D, TK19J55D, TK1P90A, TK1Q90A, TK20A25D, TK20A60U
Keywords - TK18A30D MOSFET specs
TK18A30D cross reference
TK18A30D equivalent finder
TK18A30D pdf lookup
TK18A30D substitution
TK18A30D replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
MOSFET Parameters. How They Affect Each Other
History: PB502CW | 2SK3095LS
🌐 : EN ES РУ
LIST
Last Update
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D
Popular searches
60n60 mosfet | 2sc2412 | 2sc372 | 2sd400 datasheet | k2645 | tip3055 equivalent | 3sk73 | 13n10 mosfet
