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TK18A60V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK18A60V
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220SIS
     - Selección de transistores por parámetros

 

TK18A60V Datasheet (PDF)

 ..1. Size:260K  toshiba
 tk18a60v.pdf pdf_icon

TK18A60V

TK18A60VMOSFETs Silicon N-Channel MOS (DTMOS)TK18A60VTK18A60VTK18A60VTK18A60V1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.165 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 9.1. Size:223K  toshiba
 tk18a30d.pdf pdf_icon

TK18A60V

TK18A30DMOSFETs Silicon N-Channel MOS (-MOS)TK18A30DTK18A30DTK18A30DTK18A30D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.1 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 300 V)(3) Enhancement mode: Vth =

 9.2. Size:198K  toshiba
 tk18a50d.pdf pdf_icon

TK18A60V

TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK18A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 9.3. Size:253K  inchange semiconductor
 tk18a30d.pdf pdf_icon

TK18A60V

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK18A30DITK18A30DFEATURESLow drain-source on-resistance:RDS(ON) = 0.1 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMP1096UCB4 | SMOS44N80 | AM2336N-T1 | CEF05N6 | G11 | AUIRF7734M2

 

 
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