TK18A60V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK18A60V
Маркировка: K18A60V
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 45 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 39 nC
Время нарастания (tr): 40 ns
Выходная емкость (Cd): 40 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm
Тип корпуса: TO220SIS
TK18A60V Datasheet (PDF)
tk18a60v.pdf
TK18A60VMOSFETs Silicon N-Channel MOS (DTMOS)TK18A60VTK18A60VTK18A60VTK18A60V1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.165 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk18a30d.pdf
TK18A30DMOSFETs Silicon N-Channel MOS (-MOS)TK18A30DTK18A30DTK18A30DTK18A30D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.1 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 300 V)(3) Enhancement mode: Vth =
tk18a50d.pdf
TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK18A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk18a30d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK18A30DITK18A30DFEATURESLow drain-source on-resistance:RDS(ON) = 0.1 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
tk18a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK18A50DITK18A50DFEATURESLow drain-source on-resistance:RDS(on) = 0.22 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
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