TK18A60V Datasheet. Specs and Replacement

Type Designator: TK18A60V  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220SIS

  📄📄 Copy 

TK18A60V substitution

- MOSFET ⓘ Cross-Reference Search

 

TK18A60V datasheet

 ..1. Size:260K  toshiba
tk18a60v.pdf pdf_icon

TK18A60V

TK18A60V MOSFETs Silicon N-Channel MOS (DTMOS ) TK18A60V TK18A60V TK18A60V TK18A60V 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.165 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 9.1. Size:223K  toshiba
tk18a30d.pdf pdf_icon

TK18A60V

TK18A30D MOSFETs Silicon N-Channel MOS ( -MOS ) TK18A30D TK18A30D TK18A30D TK18A30D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.1 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 300 V) (3) Enhancement mode Vth = ... See More ⇒

 9.2. Size:198K  toshiba
tk18a50d.pdf pdf_icon

TK18A60V

TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK18A50D Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

 9.3. Size:253K  inchange semiconductor
tk18a30d.pdf pdf_icon

TK18A60V

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK18A30D ITK18A30D FEATURES Low drain-source on-resistance RDS(ON) = 0.1 (typ.) Enhancement mode Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(... See More ⇒

Detailed specifications: TK15X60U, TK16A45D, TK16A55D, TK16J55D, TK17A65U, TK17J65U, TK18A30D, TK18A50D, IRFP064N, TK19A45D, TK19J55D, TK1P90A, TK1Q90A, TK20A25D, TK20A60U, TK20E60U, TK20J50D

Keywords - TK18A60V MOSFET specs

 TK18A60V cross reference

 TK18A60V equivalent finder

 TK18A60V pdf lookup

 TK18A60V substitution

 TK18A60V replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility