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TK3A60DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK3A60DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO220SIS
 

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TK3A60DA Datasheet (PDF)

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TK3A60DA

TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A60DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abso

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TK3A60DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A60DAITK3A60DAFEATURESLow drain-source on-resistance:RDS(on) = 2.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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TK3A60DA

TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A65DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.3 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth =

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TK3A60DA

TK3A65DMOSFETs Silicon N-Channel MOS (-MOS)TK3A65DTK3A65DTK3A65DTK3A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.93 (typ.)(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)(3) Low leakage current: IDSS =

MOSTRAR MÁS

Otros transistores... TK2A65D , TK2P60D , TK2Q60D , TK30A06J3A , TK30A06J3 , TK30J25D , TK30S06K3L , TK35S04K3L , 18N50 , TK3A65DA , TK3A65D , TK3P50D , TK40A08K3 , TK40A10J1 , TK40A10K3 , TK40F08K3 , TK40J20D .

History: OSG65R035HZF | RTR040N03TL | NCE0224AF | TSJ10N10AT | BUK9535-100A | BLF645 | ME60N04

 

 
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