TK3A60DA MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK3A60DA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK3A60DA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO220SIS

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TK3A60DA datasheet

..1. Size:197K toshiba
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TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK3A60DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 2.2 (typ.) High forward transfer admittance Yfs = 1.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abso

..2. Size:252K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK3A60DA ITK3A60DA FEATURES Low drain-source on-resistance RDS(on) = 2.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

9.1. Size:205K toshiba
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TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK3A65DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 2.3 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement mode Vth =

9.2. Size:238K toshiba
tk3a65d.pdf pdf_icon

TK3A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK3A65D TK3A65D TK3A65D TK3A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.93 (typ.) (2) High forward transfer admittance Yfs = 2.2 S (typ.) (3) Low leakage current IDSS =

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