All MOSFET. TK3A60DA Datasheet

 

TK3A60DA MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK3A60DA
   Marking Code: K3A60DA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO220SIS

 TK3A60DA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK3A60DA Datasheet (PDF)

 ..1. Size:197K  toshiba
 tk3a60da.pdf

TK3A60DA TK3A60DA

TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A60DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.2 (typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abso

 ..2. Size:252K  inchange semiconductor
 tk3a60da.pdf

TK3A60DA TK3A60DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A60DAITK3A60DAFEATURESLow drain-source on-resistance:RDS(on) = 2.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 9.1. Size:205K  toshiba
 tk3a65da.pdf

TK3A60DA TK3A60DA

TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK3A65DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 2.3 (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement mode: Vth =

 9.2. Size:238K  toshiba
 tk3a65d.pdf

TK3A60DA TK3A60DA

TK3A65DMOSFETs Silicon N-Channel MOS (-MOS)TK3A65DTK3A65DTK3A65DTK3A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.93 (typ.)(2) High forward transfer admittance: |Yfs| = 2.2 S (typ.)(3) Low leakage current: IDSS =

 9.3. Size:252K  inchange semiconductor
 tk3a65da.pdf

TK3A60DA TK3A60DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DAITK3A65DAFEATURESLow drain-source on-resistance:RDS(ON) = 2.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

 9.4. Size:252K  inchange semiconductor
 tk3a65d.pdf

TK3A60DA TK3A60DA

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3A65DITK3A65DFEATURESLow drain-source on-resistance:RDS(ON) = 1.93 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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