TK3A60DA. Аналоги и основные параметры
Наименование производителя: TK3A60DA
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 45 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
Тип корпуса: TO220SIS
Аналог (замена) для TK3A60DA
- подборⓘ MOSFET транзистора по параметрам
TK3A60DA даташит
tk3a60da.pdf
TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK3A60DA Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 2.2 (typ.) High forward transfer admittance Yfs = 1.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abso
tk3a60da.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK3A60DA ITK3A60DA FEATURES Low drain-source on-resistance RDS(on) = 2.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING
tk3a65da.pdf
TK3A65DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK3A65DA Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 2.3 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 650 V) Enhancement mode Vth =
tk3a65d.pdf
TK3A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK3A65D TK3A65D TK3A65D TK3A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.93 (typ.) (2) High forward transfer admittance Yfs = 2.2 S (typ.) (3) Low leakage current IDSS =
Другие IGBT... TK2A65D, TK2P60D, TK2Q60D, TK30A06J3A, TK30A06J3, TK30J25D, TK30S06K3L, TK35S04K3L, BS170, TK3A65DA, TK3A65D, TK3P50D, TK40A08K3, TK40A10J1, TK40A10K3, TK40F08K3, TK40J20D
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