TK40P03M1 Todos los transistores

 

TK40P03M1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK40P03M1
   Código: K40P03M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 17.5 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0108 Ohm
   Paquete / Cubierta: DPAK
 

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TK40P03M1 Datasheet (PDF)

 ..1. Size:241K  toshiba
 tk40p03m1.pdf pdf_icon

TK40P03M1

TK40P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P03M1TK40P03M1TK40P03M1TK40P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop PCs2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 5.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.3 m (typ.) (VGS = 10

 8.1. Size:235K  toshiba
 tk40p04m1.pdf pdf_icon

TK40P03M1

TK40P04M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK40P04M1TK40P04M1TK40P04M1TK40P04M11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 7.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 8.5 m (t

 8.2. Size:373K  first silicon
 ftk40p04d.pdf pdf_icon

TK40P03M1

SEMICONDUCTORFTK40P04DTECHNICAL DATAFTK40P04 P-Channel Power MOSFET AIDESCRIPTION CJThe FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MA

 8.3. Size:1425K  cn vbsemi
 tk40p04m.pdf pdf_icon

TK40P03M1

TK40P04Mwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM RA

MOSTRAR MÁS

Otros transistores... TK40A08K3 , TK40A10J1 , TK40A10K3 , TK40F08K3 , TK40J20D , TK40J60T , TK40J60U , TK40M60U , CS150N03A8 , TK40P04M1 , TK40S10K3Z , TK40X10J1 , TK45P03M1 , TK4A50D , TK4A53D , TK4A55DA , TK4A55D .

 

 
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