TK40P03M1. Аналоги и основные параметры

Наименование производителя: TK40P03M1

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 33 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 260 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0108 Ohm

Тип корпуса: DPAK

Аналог (замена) для TK40P03M1

- подборⓘ MOSFET транзистора по параметрам

 

TK40P03M1 даташит

 ..1. Size:241K  toshiba
 tk40p03m1.pdf pdf_icon

TK40P03M1

TK40P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P03M1 TK40P03M1 TK40P03M1 TK40P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop PCs 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 5.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.3 m (typ.) (VGS = 10

 8.1. Size:235K  toshiba
 tk40p04m1.pdf pdf_icon

TK40P03M1

TK40P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P04M1 TK40P04M1 TK40P04M1 TK40P04M1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.5 m (t

 8.2. Size:373K  first silicon
 ftk40p04d.pdf pdf_icon

TK40P03M1

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MA

 8.3. Size:1425K  cn vbsemi
 tk40p04m.pdf pdf_icon

TK40P03M1

TK40P04M www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RA

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