TK40P03M1 Specs and Replacement

Type Designator: TK40P03M1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm

Package: DPAK

TK40P03M1 substitution

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TK40P03M1 datasheet

 ..1. Size:241K  toshiba
tk40p03m1.pdf pdf_icon

TK40P03M1

TK40P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P03M1 TK40P03M1 TK40P03M1 TK40P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop PCs 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 5.7 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.3 m (typ.) (VGS = 10... See More ⇒

 8.1. Size:235K  toshiba
tk40p04m1.pdf pdf_icon

TK40P03M1

TK40P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK40P04M1 TK40P04M1 TK40P04M1 TK40P04M1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 7.4 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 8.5 m (t... See More ⇒

 8.2. Size:373K  first silicon
ftk40p04d.pdf pdf_icon

TK40P03M1

SEMICONDUCTOR FTK40P04D TECHNICAL DATA FTK40P04 P-Channel Power MOSFET A I DESCRIPTION C J The FTK40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MA... See More ⇒

 8.3. Size:1425K  cn vbsemi
tk40p04m.pdf pdf_icon

TK40P03M1

TK40P04M www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RA... See More ⇒

Detailed specifications: TK40A08K3, TK40A10J1, TK40A10K3, TK40F08K3, TK40J20D, TK40J60T, TK40J60U, TK40M60U, IRF520, TK40P04M1, TK40S10K3Z, TK40X10J1, TK45P03M1, TK4A50D, TK4A53D, TK4A55DA, TK4A55D

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