TK4A60DA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK4A60DA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: TO220SIS

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TK4A60DA datasheet

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TK4A60DA

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DA Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.7 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

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TK4A60DA

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4A60DA ITK4A60DA FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING

 7.1. Size:190K  toshiba
 tk4a60db.pdf pdf_icon

TK4A60DA

TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60DB Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 2.2 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600V) Enhancement mode Vth

 7.2. Size:188K  toshiba
 tk4a60d.pdf pdf_icon

TK4A60DA

TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK4A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ab

MOSTRAR MÁS

Otros transistores... TK40P04M1, TK40S10K3Z, TK40X10J1, TK45P03M1, TK4A50D, TK4A53D, TK4A55DA, TK4A55D, IRFB31N20D, TK4A60DB, TK4A60D, TK4A65DA, TK4P50D, TK4P55DA, TK4P55D, TK4P60DA, TK4P60DB